Semiconductor fuse and method
US5672905A · kind A · utility
19Cited by
14References
8Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 26, 1992 |
| Grant date | Sep 30, 1997 |
| Priority date | — |
| Expiry date | Aug 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor fuse and method for fabricating the same An insulating layer is provided and a trench formed therein. A fusible link is then formed across the insulating layer and trench and conformal therewith. The link has a break region of minimum thickness and width at an intersection of a sidewall and bottom surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.