Semiconductor device and fabricating method thereof
US5673283A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1996 |
| Grant date | Sep 30, 1997 |
| Priority date | — |
| Expiry date | Mar 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate, a strained multi-quantum well with alternatingly laminated first barrier layers and well layers with second barrier layers as outermost layers of the strained MQW structure. The strained MQW structure has a safety factor K.sub.safe =3.9; and ##EQU1## Therefore, it is possible to make the strained MQW structure have a sufficient margin with respect to critical conditions concerning the generation of dislocations, and deterioration of operational characteristics in continuous operation of the semiconductor device can be suppressed so that the reliability of the semiconductor device is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.