Method of manufacturing electron-emitting device
US5674100A · kind A · utility
19Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1994 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Jul 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/027
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.