Susceptor for a device for epitaxially growing objects and such a device
US5674320A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1996 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Mar 15, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A susceptor for a device for epitaxially growing objects of a material on a substrate. The material is selected from the group consisting of SiC, a Group 3B-nitride, and alloys of SiC and a Group 3B-nitride. The susceptor includes at least two channels each adapted to receive at least one substrate for growth of at least one of the objects and each adapted to receive a flow of the material to be fed to the susceptor for the growth of the objects. Walls surround the at least two channels including a central part between the channels. Heat is applied surrounding the susceptor, including the walls and the central part. A higher electrical resistance for induction currents generated by the heating is provided over at least one cross-sectional area of the susceptor. The higher electrical resistance is created by a physical division of the susceptor walls and a thin plate of SiC. The higher electrical resistance extends between the channels of the susceptor and an outer limitation of the susceptor and between separate wall parts of the susceptor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.