Method of fabricating a field emission device
US5675210A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 31, 1995 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Jul 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3042
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a field emission device which can facilitate the formation of a micro-tip for emitting electrons by a field effect. The micro-tip is fabricated such that the etching rate differences among the tungsten cathode, the lower titanium adhesive layer and the upper aluminum mask, and the internal stress differences are made to be very large, and thus, tungsten micro-tip is protruded by the internal stress when the adhesive layer and the mask are instantaneously etched. Since the micro-tip size is easily adjusted, and the internal stress of tungsten and characteristics of BOE method are utilized throughout the fabricating process, the reproducibility is ensured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.