Overcurrent detection circuit for a power MOSFET and method therefor
US5675268A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1995 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Oct 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0822
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An overcurrent detector circuit (21) for a power MOSFET (22) is described. The overcurrent detector circuit (21) generates a bias voltage corresponding to the drain to source voltage of the power MOSFET (22). The drain to source voltage correlates directly to the current being conducted by the power MOSFET (22). An overcurrent condition occurs when the power MOSFET (22) exceeds a predetermined current. The bias voltage is applied to a transistor (24) for generating a current. A current source (29) couples to the transistor (24). The current provided by the transistor equals the reference current of the current source (29) when the power MOSFET conducts the predetermined current. The overcurrent detector circuit (21) generates a signal indicating a overcurrent condition does not exist when the reference current is greater the current provided by the transistor. Conversely, the overcurrent detector circuit (21) generates a signal indicating the overcurrent condition when the current provided by the transistor exceeds the reference current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.