Semiconductor laser device
US5675601A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 1996 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Jan 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes, on a first conductivity type GaAs substrate, successively, a first conductivity type GaAs buffer layer, a first conductivity type Al.sub.s Ga.sub.1-s As (0<s<1) cladding layer, a quantum well active layer having a structure that can produce an oscillation wavelength of 0.9.about.1.2 .mu.m and including a well layer comprising In.sub.x Ga.sub.1-x As (0<x<1) and a barrier layer comprising Al.sub.y Ga.sub.1-y As (0<y<s), a second conductivity type Al.sub.t Ga.sub.1-t As (1<t<y) upper cladding layer, a second conductivity type GaAs contact layer, and a multiple reflection film layer alternatingly laminating first and second semiconductor materials which have the same conductivity type as the adjacent semiconductor materials and have the different refractive indices in number of layers, first and second electrodes, and a pair of laser resonator facets perpendicular to the active layer and the multiple reflection film layer. Therefore, a semiconductor laser device in which generation of large mode hops is suppressed, the generation of kinks is reduced, and stable and high power output laser beams are produced is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.