Pin junction photovoltaic device having a multi-layered I-type semiconductor layer with a specific non-single crystal I-type layer formed by a microwave plasma CVD process
US5676765A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Mar 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic element comprising a substrate and a multi-layered semiconductor active layer having a pin junction structure disposed on said substrate, said multi-layered semiconductor layer comprising a non-single crystal semiconductor layer of n- or p-type, a non-single crystal i-type semiconductor layer and a non-single crystal semiconductor layer of p- or n-type being stacked in this order from the substrate side, characterized in that said i-type semiconductor layer comprises a three-layered structure comprising a non-single crystal layer (b) formed by means of a microwave plasma CVD process interposed between a pair of non-single crystal layers (a) and (c) each formed by means of a RF plasma CVD process, and said i-type layer (b) is a non-single crystal i-type layer formed by means of the microwave plasma process from a mixture of a silane series gas not containing chlorine atom(s), a chlorine-containing raw material gas in an amount of 10% or less of the total amount of the chlorine-free silane series gas and the chlorine-containing raw material gas, and hydrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.