Process for fabricating phase shift mask and process of semiconductor integrated circuit device
US5677092A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 6, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Feb 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.