Process for forming a pattern on a semiconductor substrate using a deep ultraviolet absorbent composition
US5677112A · kind A · utility
32Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Jul 29, 1996 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Jul 29, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.