Method for manufacturing semiconductor device isolation region
US5677229A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Apr 28, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device of the present invention has the step of forming an insulation material on a main surface of a semiconductor substrate. A groove is formed to extend from the surface of the material film to the substrate. The groove is buried with a first insulation film. By use of the first insulation film as an etching mask, the material film is removed, so that a projecting portion projecting to the first insulation film from the main surface can be obtained. A second insulation film is formed on a side surface of the projecting portion in a sloped shape, which is from the top portion of the projecting portion to the main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.