Method for forming a semiconductor device
US5677240A · kind A · utility
63Cited by
6References
68Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | May 26, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.