Semiconductor radiation detector with enhanced charge collection
US5677539A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Oct 13, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/241
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A radiation detector for detecting ionizing radiation. The detector includes a semiconductor having at least two sides. A bias electrode is formed on one side of the semiconductor. A signal electrode is formed on a side of the semiconductor and is used to detect the energy level of the ionizing radiation. A third electrode (the control electrode) is also formed on the semiconductor. The control electrode shares charges induced by the ionizing radiation with the signal electrode, until the charge clouds are close to the signal electrode. The control electrode also alters the electric field within the semiconductor, such that the field guides the charge clouds toward the signal electrode when the clouds closely approach the signal electrode. As a result, trapping of charge carrying radiation (i.e., electrons or holes) is minimized, and low-energy tailing is virtually eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.