Bi-stable memory element
US5677823A · kind A · utility
163Cited by
9References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 6, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Nov 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2059/0063
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A bi-stable memory element (1) comprises a base contact (3), and a bridging contact (8), both made from an electrically conductive material. The bridging contact (8) is dimensioned so as to have two stable positions, in one of which the bridging contact (8) is in contact with the base contact (3), and in the other of which the bridging contact (8) is spaced apart from the base contact (3). Deflection means (4, 5) deflects the bridging contact (8) from one stable position to the other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.