Embedded phase shifting photomasks and method for manufacturing same
US5679483A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1994 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Dec 20, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention phase shifting photomask is fabricated by means of a structured modification to the surface of a mask blank suitable for photolithography. Ion implantation, diffusion or similar processes are used to alter the optical properties of selected areas of a mask blank in such a way that these areas modify the intensity and phase of optical radiation transmitted through the processed areas of the mask blank substrate. The present invention provides the intended phase and intensity modulation by modification of a surface layer or other layer which is close to the surface of the mask blank. This leaves the actual surface of the mask blank intact and smooth without chemical changes to the surface of the mask blank. In this way optical radiation is not scattered on the borders of different materials and unwanted particulates will have a lower chance of adhering to a smooth surface with little or no topography. Use of photomasks manufactured in accordance with the present invention method enhances the resolution and process window, for example, depth of focus and/or exposure latitude of the lithographic process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.