Method of fabricating a read only memory in MOS technology, and memory thus obtained

US5679594A · kind A · utility

Assignee

• Matra MHS · FR

Inventors

• Klaus Rodde · Carquefou, FR
• Olivier Le Neel · Marigot, FR

Key dates

• Filing date: Jan 30, 1996
• Grant date: Oct 21, 1997
• Expiry date: Jan 30, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B20/00

Abstract

A method of fabricating a read only memory consisting of a matrix of arrays of enhancement-mode or depletion-mode programmed MOS transistors that consists, on a silicon substrate (SU) of a first conduction type, in defining by masking, retrograde wells of the same conduction type as that of the substrate, and then retrograde wells of conduction type opposite to that of the substrate. Removal of the protective oxide allows thus to predefine the enhancement-mode and depletion-mode transistors.