Nonvolatile semiconductor memory device
US5680347A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1995 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Jun 29, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises a memory cell array in which a plurality of memory cell units are arranged in a matrix, and a first and second common signal lines for exchanging signals with the memory cell array, wherein each of the memory cell units contains a nonvolatile memory section having at least one nonvolatile memory cell, a first select MOS transistor for making the nonvolatile memory section conducting to the first common signal line, and a second select MOS transistor with a threshold voltage different from that of the first select MOS transistor for making the nonvolatile memory section conducting to the second common signal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.