Integrated monolithic laser-modulator component with multiple quantum well structure
US5680411A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1996 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Oct 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated monolithic laser-modulator component having a multiple quantum well structure. This component includes an InP substrate, a laser (L) formed from a stack of semiconductor layers epitaxied on the substrate, including an active and absorbent layer and a periodic Bragg grating fixing the emission wavelength of the laser to a value slightly above an optimum wavelength of the laser gain peak. An electrooptical modulator (M) is formed from the same stack of semiconductor layers, with the exception of the Bragg grating, the active layer of the laser and the absorbing layer of the modulator being formed by the same epitaxied structure having several constrained or unconstrained quantum wells, the modulator functioning according to a confined Stark effect. The semiconductor layers of the laser and those of the modulator are electrically controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.