Plasma processing method
US5681424A · kind A · utility
37Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1996 |
| Grant date | Oct 28, 1997 |
| Priority date | — |
| Expiry date | Feb 20, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of cleaning an etching chamber, with a high throughput, of a plasma processing apparatus for etching by use of hydrogen bromide (HBr) as an etching gas while holding a wafer on an electrode by electrostatic chuck. When the static charge on the wafer electrostatically chucked on the electrode is eliminated after the completion of the etching, O.sub.2 gas is introduced into the etching chamber from a gas flow-rate controller. A plasma of O.sub.2 gas is generated to cause the electric charge on the wafer to flow to the earth through the plasma, and at the same time, the interior of the etching chamber is cleaned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.