Method of doping metal layers for electromigration resistance
US5681779A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1994 |
| Grant date | Oct 28, 1997 |
| Priority date | — |
| Expiry date | Feb 4, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doping metal layers on integrated circuits to provide electromigration resistance and integrated circuits having metal alloy interconnects characterized by being resistant to electromigration are provided. The process consists of the steps of (1) depositing a film of a pure first conductive metal upon a semiconductor, (2) patterning and etching the deposited film, (3) subjecting the patterned conductive metal film to metallo-organic chemical vapor deposition in order to deposit upon the first deposited metal and not upon any semiconductive areas present in the patterned conductive metal film a doping amount of a second conductive metal different from the first metal, and (4) heating at a temperature sufficient to uniformly diffuse the second metal through the bulk of the patterned first conductive metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.