Process for manufacturing integrated circuit capacitors and resistors and the capacitors and resistors

US5682060A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Yingsheng Tung · Plano, US
• Robert E. Dixon, Jr. · Haymarket, US

Key dates

• Filing date: Apr 24, 1995
• Grant date: Oct 28, 1997
• Expiry date: Apr 24, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68

Abstract

A method of making an integrated circuit capacitor and/or resistor and the capacitor and/or resistor wherein the method comprises providing an electrically conductive region, preferably highly doped silicon, forming a first electrode of a capacitor, forming a layer of electrically insulating material, preferably silicon oxide, silicon nitride or a combination thereof, over the surface and forming a layer of a metal silicide, preferably titanium silicide, over the layer of electrically insulating material by forming a layer of polysilicon over the layer of electrically insulating material, forming a layer of a metal, preferably titanium, which forms an electrically conductive composition when reacted with polysilicon over the layer of polysilicon, reacting the metal with the polysilicon to form an electrically conductive layer therewith and removing any unreacted metal. In accordance with a second embodiment, wherein both capacitor electrodes are accessible from one side of the capacitor, a portion of the first electrode is exposed and the layer of a metal silicide extends to and contacts the exposed portion of the first electrode. The portion of the layer of metal silicide contacti…