Method for temperature measurement of semiconducting substrates having optically opaque overlayers
US5683180A · kind A · utility
30Cited by
7References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 13, 1994 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Sep 13, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K11/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for enabling the use of optical techniques for temperature measurement of a semiconducting substrate coated with an optically opaque overlayer. A reflective mirror structure is inserted between the semiconducting substrate and the optically opaque overlayer. The reflective structure prevents the overlayer from absorbing light transmitted through the semiconducting substrate and instead reflects the light, thereby restoring the substrate front-surface reflectivity required for temperature measurement analysis by optical techniques such as absorption edge reflectance spectroscopy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.