Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
US5683546A · kind A · utility
12Cited by
13References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 22, 1993 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Oct 22, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/924
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is for enlarging a freedom of layout including an air bridge pattern and enhancing the availability for various purposes. A mask layer including an air bridge pattern is formed on a (100) plane of a silicon substrate, isotropic etching is carried out until a point of intersection between tangents of a peripheral curved plane comes to under the air bridge pattern plane, and then an air bridge is formed by means of anisotropic etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.