Method of making a low noise semiconductor device comprising a screening measurement
US5683917A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1996 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Jul 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed method of making a semiconductor device comprises a screening procedure that facilitates identification of devices having relatively low flicker noise. The devices are typically semiconductor diodes. The procedure utilizes our discovery of a correlation between the reverse bias current I.sub.r of a semiconductor device and the flicker noise power, and comprises measurement of the reverse bias current and comparison of the measured value with a predetermined comparison value I.sub.rc. Devices having I.sub.r .ltoreq.I.sub.rc are those that have relatively low flicker noise. The screening procedure is simple and quick, and can be readily performed in a manufacturing environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.