Photoelectric switch
US5684666A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1995 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | May 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/78
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A novel semiconductor switching device for use in high voltage applications (typically ranging from 5 kV up to about 50 kV) makes use of the well-known effect of reverse conduction in silicon diodes when exposed to light. Hitherto, photodiodes have been commercial available for relatively low voltage applications. The device disclosed herein is implemented by a high voltage diode having a series of semiconductor junctions and a light emitting diode operable to irradiate the junctions to render the high voltage diode conducting in the reverse bias direction. The switching device finds application in electrostatic spraying devices where the current demands are relatively small, eg up to about 2 .mu.A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.