Semiconductor laser having a structure of photonic bandgap material
US5684817A · kind A · utility
135Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 1996 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | May 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a semiconductor laser that is constituted by at least one active layer sandwiched between two confinement layers with P and N type doping to constitute a PN junction. In at least one of the confinement layers and/or the active layer, holes are designed on each side of the cavity so as to form structures of photonic bandgap material along the lateral walls of the cavity and the ends of the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.