Method for the repair of lithographic masks
US5686206A · kind A · utility
9Cited by
11References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1994 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Nov 18, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/72
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a method for the repair of void type defects in phase-shifting optical lithography masks by depositing a transparent mateial on the defect from a gaseous precursor by ultraviolet beam-induced deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.