Method of making thin film transistor
US5686326A · kind A · utility
13Cited by
10References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor comprises a gate electrode, an insulating layer and a semiconductor layer formed and laminated on an insulating substrate, said insulating layer and said semiconductor layer having the same planar pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.