Three-terminal non-volatile ferroelectric/superconductor thin film field effect transistor
US5686745A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1995 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Jun 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/207
Abstract
A three-terminal non-volatile ferroelectric/superconductor thin film field effect transistor (FsuFET). The FSuFET is used as a non-volatile memory storage device that provides two static states and four transient states. The FSuFET includes a superconducting film epitaxially grown on a substrate layer. A ferroelectric thin film is then epitaxially grown on the superconducting layer to form the gate of the FSuFET. A drain electrode and a source electrode are then contacted to the superconducting film on either side of the ferroelectric gate. In static mode, the two polarization states of the ferroelectric gate correspond to the binary "0" and "1" states, which are switched by applying a voltage pulse of sufficient magnitude. In transient mode, the four states depend upon the polarization state of the ferroelectric gate and the conductive state (superconducting or non-superconducting) of the drain-source channel. The four states are generated at the drain of the FSuFET and consist of a positive, high pulse; a positive, low pulse; a negative, high pulse; and a negative, low pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.