Etching method, method of producing a semiconductor device, and etchant therefor
US5688366A · kind A · utility
34Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1995 |
| Grant date | Nov 18, 1997 |
| Priority date | — |
| Expiry date | Apr 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/247
Abstract
A method of etching material as a transparent conductive film, a method of producing a semiconductor device, and an etchant therefor are disclosed. These method and etchant are simple, excellent in etching selectivity, and stable for a long time. The methods include the steps of disposing paste on material wherein the paste includes an etching solution and at least one kind of fine particles. A method of producing a semiconductor device, including the above-described etching steps is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.