III-V aresenide-nitride semiconductor materials and devices
US5689123A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1996 |
| Grant date | Nov 18, 1997 |
| Priority date | — |
| Expiry date | Oct 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32375
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.