Single crystal growing method
US5690734A · kind A · utility
18Cited by
5References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1996 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Mar 19, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1064
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.