Process for growing crystals

US5690735A · kind A · utility

Assignee

• Deutsche Forschungsanstalt Fur Luft-Und Raumfahrt E.V. · DE

Inventor

• Uwe Becker · Stuttgart, DE

Key dates

• Filing date: Aug 31, 1995
• Grant date: Nov 25, 1997
• Expiry date: Aug 31, 2015

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/60
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In order to improve a process for growing crystals from a molten zone which is heated and to which a source material is supplied which is melted and deposited in crystalline form on a substrate from the molten zone, such that dimensions of the substrate along an interface between the substrate and the molten zone are dependent to a lesser extent on dimensions of the source material supplied to the molten zone, it is suggested that the molten zone be mechanically stabilized by a wall member which forms a boundary of the molten zone and is essentially immovable relative to the molten zone, a base member which forms a lower boundary of the molten zone and is movable relative to the wall member and a meniscus arranged between the base member and the wall member.