Arc discharge plasma CVD method for forming diamond-like carbon films
US5691010A · kind A · utility
16Cited by
11References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 18, 1994 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Oct 18, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a diamond-like carbon film on a substrate arranged in a vacuum chamber includes the steps of generating an arc-discharge plasma current in the vacuum chamber, supplying a reaction gas containing carbon atoms, such as CH.sub.4 gas for example, into the arc-discharge plasma current, applying a high-frequency voltage to the substrate so that a self-bias developed in the substrate is not more than -200 V, and forming a diamond-like carbon film from the reaction gas on the substrate that is supplied with the high-frequency voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.