Pattern transfer techniques for fabrication of lenslet arrays for solid state imagers
US5691116A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1996 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Sep 20, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming lenslets which collect light and focus the light onto photosensitive elements of an electronic imager. The method includes providing a transparent lenslet-forming layer on a substrate or on layers on the substrate, forming a thin etch-stop layer on the transparent lenslet-forming layer and patterning a thin photosensitive resin mask on the etch-stop layer so that the mask pattern corresponds to lenslets to be formed. The method further includes transferring by etching the pattern of the photosensitive resin mask to the thin etch-stop layer to form a thin etch-stop mask, anisotropically plasma etching the transparent lenslet-forming layer according to the patterned thin etch-stop mask, removing the thin etch-stop mask, and thermally reflowing the etched transparent lenslet-forming layer to form the lenslets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.