Method for stripping photoresist employing a hot hydrogen atmosphere
US5691117A · kind A · utility
11Cited by
10References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1995 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Jan 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It has been discovered that organic photoresists may be quickly, conveniently, and completely stripped using a hot hydrogen atmosphere. The substrates are preferably exposed to such atmosphere utilizing a hydrogen conveyor furnace. The gases from the furnace are burned to carbon dioxide and water thereby eliminating the need to dispose of a stripping agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.