Process of fabricating semiconductor device having capacitor electrode implanted with boron difluoride
US5691220A · kind A · utility
7Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1996 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Mar 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A stacked storage capacitor of a dynamic random access memory cell has a p-type polysilicon layer forming an upper part of an accumulating electrode, a dielectric film structure and a p-type polysilicon counter electrode, and boron difluoride is ion implanted into a non-doped polysilicon layer for the counter electrode so as to decrease leakage current density rather than a boron-implanted polysilicon counter electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.