Method for fabricating semiconductor device
US5691237A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 1995 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | May 31, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate 11 having concavities and convexities in the upper surface, and silica particles (granular insulators) 15 provided in the concavities to planarize the entire upper surface of the semiconductor substrate 11 are included. First, the silica particles 15 are laid over an upper surface of a semiconductor substrate 11 to provide the granular insulators 15 in cavities in the upper surface of the semiconductor substrate 11, and the silica particles 15 provided on convexities on the upper surface of the semiconductor substrate 11 are removed, whereby the concavities 11 are buried with the silica particles 15 so as to improve global planarizarion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.