Method of forming a metal contact to a novel polysilicon contact extension
US5691250A · kind A · utility
2Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1996 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Aug 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.