Method of producing a high T.sub.c superconducting film free of second phase defects
US5691280A · kind A · utility
6Cited by
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13Claims
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Key dates
| Filing date | May 14, 1996 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | May 14, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/729
Abstract
A thin film which is substantially free of measurable surface defects due to second-phase inclusions is disclosed. The film is composed of multilayered strata of a first metal oxide interspersed with single molecular layers of a second metal oxide, where the second metal oxide is effective to absorb second-phase defects which form in the first oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.