Method of making a monolithic thin film resonator lattice filter
US5692279A · kind A · utility
165Cited by
6References
8Claims
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Key dates
| Filing date | Aug 17, 1995 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Aug 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A monolithic thin film resonator, lattice filter including spaced apart strips of a conductive film positioned on a substrate so as to define a first set of I/O terminals, a layer of piezoelectric material positioned on the conductive film, and spaced apart conductive strips of a conductive film positioned on the piezoelectric layer orthogonal to the first strips to form cross-over areas, each defining a thin film resonator and a second set of I/O terminals. A plurality of portions of a dielectric film are positioned on selected cross-over areas to mass load the thin film resonators so as to lower the resonant frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.