Method for cleaning a process chamber
US5693147A · kind A · utility
29Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1995 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Nov 3, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Fluorocarbon and water vapor are introduced directly into a plasma in a process chamber, not downstream from the plasma, thereby creating HF vapor to clean the process chamber. The process may also be used to remove a photoresist residue left remaining on a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.