Laser diode having narrowed radiation angle characteristic
US5693965A · kind A · utility
6Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 4, 1996 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Nov 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active layer 102 and a clad layer 103 are formed on a semiconductor substrate 101. The active layer including an optical guide layer and an optical confinement layer/formed so that the thickness of the active layer gradually decreases toward a light-emission-side end facet. Since a spot size is gradually expanded toward an emission end, the radiation angle of an emitted beam is narrowed and characteristics including a threshold current become superior.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.