N-channel field effect transistor including a thin-film fullerene
US5693977A · kind A · utility
20Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1996 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Sep 5, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/936
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An n-channel field-effect transistor is fabricated utilizing a thin-film fullerene (for example, C.sub.60) as the active element. The fullerene film is deposited onto a device substrate in an ultra-high-vacuum chamber and is thus substantially oxygen-free. Subsequently, while still in the chamber, the fullerene film is encapsulated with a material that is impervious to oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.