Epitaxial visible-light-emitting devices with light extracted through the substrate and method of making same
US5694412A · kind A · utility
2Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1996 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Apr 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/347
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An epitaxial structure suitable for use in a light-emitting device having at least one operating frequency in the visible range, and a method for providing the same. The epitaxial structure includes a semiconductor substrate which is transparent at the operating frequency, an output mirror lattice-matched to the substrate and comprising at least one pair of semiconductor layers having substantially different refractive indices and an active region lattice-matched to the substrate and having a bandgap narrower than the bandgap of the output mirror.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.