Patent · US Expired

Susceptor for a device for epitaxially growing objects and such a device

US5695567A · kind A · utility

543Cited by

16References

12Claims

0Family size

Assignee

ABB RESEARCH LTD. · CH

Inventors

Olle Kordina · Linköping, SE
Jan-Olov Fornell · Malmö, SE
Rune Berge · Lund, SE
Roger Nilsson · Höör, SE

Key dates

Filing date	Mar 15, 1996
Grant date	Dec 9, 1997
Priority date	—
Expiry date	Mar 15, 2016

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B31/14
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A susceptor for a device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate to be received in the susceptor, includes plurality of separate susceptor wall pieces defining a top wall, a bottom wall and lateral walls. The wall pieces are made of a material which may be heated by induction and are secured to each other to form the susceptor. A channel is defined by susceptor walls adapted to receive the substrate and through which a source material for the growth is to be fed. At least one SiC-plate is inserted to cover at least one of the top and bottom walls and to extend between and separate the lateral walls and the at least one of the top and bottom walls.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.