Non-photolithographic etch mask for submicron features
US5695658A · kind A · utility
35Cited by
28References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 7, 1996 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Mar 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-photolithographic, physical patterning process, which is useful for selectively etching of a substrate, is provided. The process comprises electrostatically charging liquid droplets which are selectively etchable with respect to the substrate, dispersing the droplets onto substrate in a pattern; and etching the substrate using the droplets as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.