Method of forming a hard-carbon-film-coated substrate
US5695832A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming the coated substrate includes a first step of forming the intermediate layer on the substrate in a vacuum chamber, and a second step of forming the hard carbon film on the intermediate layer within the same vacuum chamber. The first step may involve evaporation or sputtering of material atoms for the intermediate layer, either with or without plasma generation, or directly forming a plasma from a gas containing the material atoms. The second step may involve forming a plasma from a gas that contains carbon. Another method involves generating a plasma, applying a high frequency voltage to the substrate so as to generate a self-bias of not more than -20 V, and supplying a reaction gas that contains carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.