Thin film transistors for the peripheral circuit portion and the pixel portion
US5696388A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 12, 1996 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Nov 12, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/982
Abstract
In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.