Light-emitting semiconductor device
US5696389A · kind A · utility
455Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1995 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Mar 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.